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Structural and optical characterization of infrared hot electron transistor

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Title: Structural and optical characterization of infrared hot electron transistor
Author(s): Jung, Hyeson; Pinsukanjana, Paul; Dutta, Mitra; Choi, Kwong-Kit; Tidrow, Meimei Z.
Subject(s): magnetoresistance spin valves
Abstract: We present structural, optical, and transport characterization of long wave infrared hot electron transistor (IHET) based on doped quantum wells of InGaAs/AlGaAs. The atomic resolution images and x-ray diffraction patterns verified a lattice matched and band-gap engineered device structure of IHET. Measured values of the photocurrent were less than the theoretically expected values and indicated a loss of photocurrent between the base of the IHET and the collector. A higher filter height due to high unexpected dopant in the filter barrier was suggested as a possible cause of the current loss. Photoluminescence data in the near infrared showed the existence of such a dopant. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457122]
Issue Date: 2010-08-01
Publisher: American Institute of Physics
Citation Info: Jung, H., Pinsukanjana, P., Dutta, M., Choi, K. K., & Tidrow, M. Z. 2010. Structural and optical characterization of infrared hot electron transistor. Journal of Applied Physics, 108(3). DOI: 10.1063/1.3457122
Type: Article
Description: The original source for this publication is at American Institute of Physics [http://jap.aip.org/]; DOI: 10.1063/1.3457122
URI: http://hdl.handle.net/10027/7611
ISSN: 0021-8979
Sponsor: This work was supported by the MDA-STTR under Contract No. W9113M-08-C-0012.
Date Available in INDIGO: 2011-05-12
 

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