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Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(1 0 0) using (CpMe)3Er precursor and ozone

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Title: Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(1 0 0) using (CpMe)3Er precursor and ozone
Author(s): Xu, Runshen; Tao, Qian; Yang, Yi; Takoudis, Christos G.
Abstract: Thin stoichiometric erbium oxide films were atomic layer deposited on p-type Si(100) substrates using tris(methylcyclopentadienyl)erbium and ozone. The film growth rate was found to be 0.12 ± 0.01 nm/cycle with an atomic layer deposition temperature window of 170-330 ºC. X-ray photoelectron spectral (XPS) analysis of the resulting Er2O3 films indicated the as-deposited films to be stoichiometric with no evidence of carbon contamination. Studies of post deposition annealing effects on resulting films and interfaces were done using Fourier transforms infrared spectroscopy, XPS, glancing incidence X-ray diffraction, and optical surface profilometry. As-deposited Er2O3 films were found to crystallize in the cubic structure with dominant (222) orientation; no erbium silicate was found at the interface. After annealing at 800 ºC in N2 for 5 min, a new XPS feature was found and it was assigned to the formation of erbium silicate. As the annealing temperature was increased, the interfacial erbium silicate content was found to increase in the temperature range studied.
Issue Date: 2012-09-01
Publisher: Elsevier
Citation Info: Xu, R. S., Q. Tao, et al. (2012). "Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)(3)Er precursor and ozone." Applied Surface Science 258(22): 8514-8520.DOI: 10.1016/j.apsusc.2012.05.019
Type: Article
Description: NOTICE: this is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, [Vol 258, Issue 22, (2012 Sept 1)] DOI: 10.1016/j.apsusc.2012.05.019
URI: http://hdl.handle.net/10027/8669
ISSN: 0169-4332
Sponsor: National Science Foundation (GOALI 0329195, CMMI 0609377 and EEC 0755115)
Date Available in INDIGO: 2012-09-10
 

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