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Electro-Optical Characterization of MWIR InAsSb Detectors

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journal contribution
posted on 22.11.2013, 00:00 by A.I. D’Souza, E. Robinson, A. C. Ionescu, D. Okerlund, T. J. de Lyon, H. Sharifi, M. Roebuck, D. Yap, R. D. Rajavel, N. Dhar, P. S. Wijewarnasuriya, Christoph Grein
InAs1-xSbx material with an alloy composition of the absorber layer adjusted to achieve 200K cutoff wavelengths in the 5 μm range has been grown. Compound-barrier (CB) detectors were fabricated and tested for optical response and Jdark-Vd measurements were acquired as a function of temperature. Based on absorption coefficient information in the literature and spectral response measurements of the midwave infrared (MWIR) nCBn detectors, an absorption coefficient formula α(Ε, x, T) is proposed. Since the presently suggested absorption coefficient is based on limited data, additional measurements of material and detectors with different x values and as a function of temperature should refine the absorption coefficient, providing a more accurate parametrization. Material electronic structures were computed using a k•p formalism. From the band structure, dark current density (Jdark) as a function of bias (Vd) and temperature (T) were calculated and matched to Jdark-Vd at fixed T and Jdark-T at constant Vd curves. There is a good match between simulation and data over a wide range of bias, but discrepancies that are not presently understood exist near zero bias.

Funding

This work was supported by DARPA under contract N66604-09-C-3652 (Dr. Nibir Dhar, DARPA Program Manager). However, “The views expressed are those of the author and do not reflect the official policy or position of the Department of Defense or the U.S. Government.” This is in accordance with DoDI 5230.29, January 8, 2009.

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Publisher Statement

© 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. DOI: 10.1007/s11664-012-2182-7

Publisher

Institute of Electrical and Electronics Engineers

Language

en_US

issn

0361-5235

Issue date

01/10/2012

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