Flexible high capacitance nanocomposite gate insulator for printed organic field-effect transistors
2011-03-01T00:00:00Z (GMT) by
Ceramic-polymer nanocomposite dielectric consisting of an epoxy solution with Propylene Glycol Methyl Ether Acetate as the solvent and Barium Titanate nanoparticles with capacitance in excess of 60 pF/mm2 was developed and utilized as the gate insulator for organic field effect transistors (OFETs). The high relative permittivity (κ= 35), bimodal nanocomposite utilized had two different filler particle sizes 200 nm and 1000 nm diameter particles. Bottom gate organic filed effect transistors were demonstrated using a commercially available printing technology for material deposition. A metal coated plastic film was used as the flexible gate substrate. Solution processable, p-type arylamine based amorphous organic semiconductor was utilized as the active layer. Fabricated OFETs with the solution processed nanocomposite dielectric had a high field-induced current and a low threshold voltage; these results suggest that the low operating voltage was due to the high capacitance gate insulator. In this paper, we review the characteristics of the nanocomposite dielectric material and discuss the processing and performance of the printed organic devices.