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Dissociation of trimethylgallium on the ZrB2(0001) surface

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posted on 04.04.2016, 00:00 authored by Kedar Manandhar, Michael Trenary, Shigeki Otani, Peter Zapol
X-ray photoelectron spectroscopy and reflection absorption infrared spectroscopy (RAIRS) have been used to study the dissociative adsorption of trimethylgallium (TMG) on the ZrB2(0001) surface. Spectra were obtained as a function of annealing temperature following TMG exposure at temperatures of 95 and 300 K, and also as a function of TMG exposure for a surface temperature of 300 K. After annealing above 220 K, a significant decrease in the relative concentration of carbon and gallium occurred accompanied by a shift of ∼0.2 eV in the Ga 2p3/2 binding energy. The RAIR spectra show that after annealing to ∼220 K, only one CH3 deformation band at 1196 cm−1 remains, the intensity of which is considerably decreased indicating loss of at least one methyl group from TMG. Further annealing leads to the sequential loss of the other methyl groups. The first methyl desorbs while the last two dissociate to deposit two C atoms per TMG molecule onto the ZrB2 surface.


This work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences-Materials Science under Contract No. DE-AC02-06CH11357. K.M. and M.T. also acknowledge partial support from the National Science Foundation under grant CHE-1012201.



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