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Investigating Compositional Effects of ALD Ternary Dielectric Ti-Al-O on MISH capacitor structure for Gate Insulation of InAlN/GaN and AlGaN/GaN

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journal contribution
posted on 17.01.2017, 00:00 by Albert Colon, Liliana Stan Ralu Divan, Junxia Shi
Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction fieldeffect transistors (HFETs) is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approach this problem, we fabricated metal-insulator- 2 semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being ~2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-κ properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both AlGaN/GaN and InAlN/GaN based devices.

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Post print version of article may differ from published version. The definitive version is available through American Institute of Physics Inc. at DOI:10.1116/1.4964693

Publisher

American Institute of Physics Inc.

issn

21662746

Issue date

01/11/2016

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