Piezoelectricity in wurtzite polar semiconductor nanowires: A theoretical study
journal contributionposted on 2012-08-17, 00:00 authored by B. Sen, M. Stroscio, M. Dutta
By considering acoustic phonon mode displacements in nanowires, the piezoelectrically induced electric polarization vector and the associated potential are calculated. For the case of charge-free semiconductor nanowires, the piezo energies generated by strains applied in different directions are compared. For the directions considered, it is found that the maximum piezo energy in these nanowires is generated for strain applied in the vertical direction (i.e., along z-axis). Moreover, for these nanowires, energy generation in AlN and ZnO are found to be superior to GaN, just as expected based on past treatments of nanowires using phonons of bulk structures. (C) 2011 American Institute of Physics.[doi:10.1063/1.3603036]
This work is supported by the Nation Natural Science Foundation of China under Grant Nos. 61176050, 61036003,61176092, and 60837001 (Key Program). The National Basic Research Program of China under Grant No. 2012CB933503 and the Fundamental Research Funds for the Central Universities (2010121056). The Foundation of Education Committee of Fujian Province (JB10124, JB11128),and the Technology Startup Project of Minjiang University(KQ1004).
Publisher StatementCopyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in J. Appl. Phys. 110, 024506 (2011) and may be found at http://jap.aip.org/resource/1/japiau/v110/i2/p024506_s1?view=fulltext
PublisherAmerican Institute of Physics