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Selective atomic layer deposition of HfO2 on copper patterned silicon substrates

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journal contribution
posted on 05.05.2011, 00:00 by Qian Tao, Gregory Jursich, Christos Takoudis
Selective atomic layer deposition (ALD) was performed on copper patterned silicon substrates to selectively deposit HfO2 film on silicon. The selectivity is based on differences of surface physics/chemistry rather than use of any molecular masking such as self-assembled monolayers. On silicon, the growth rate of HfO2 is 0.11 nm /cycle with no initial inhibition of film growth, while on copper no HfO2 deposition was observed up to at least 25 ALD cycles. The selective growth on silicon over copper at 25 ALD cycles provides a patterned film deposition at thicknesses of 2.8 nm HfO2 which is relevant to semiconductor nanofabrication. © 2010 American Institute of Physics

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Publisher Statement

The original source for this publication is at American Institute of Physics - Applied Physics Letters (http://apl.aip.org/); DOI: 10.1063/1.3428771

Publisher

American Institute of Physics

Language

en_US

issn

0003-6951

Issue date

01/01/2010

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