Structural and optical characterization of infrared hot electron transistor

We present structural, optical, and transport characterization of long wave infrared hot electron transistor (IHET) based on doped quantum wells of InGaAs/AlGaAs. The atomic resolution images and x-ray diffraction patterns verified a lattice matched and band-gap engineered device structure of IHET. Measured values of the photocurrent were less than the theoretically expected values and indicated a loss of photocurrent between the base of the IHET and the collector. A higher filter height due to high unexpected dopant in the filter barrier was suggested as a possible cause of the current loss. Photoluminescence data in the near infrared showed the existence of such a dopant. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3457122]