Temperature-Dependent.pdf (566.6 kB)
Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe2
journal contributionposted on 2015-11-05, 00:00 authored by LR Thoutam, YL Wang, ZL Xiao, S. Das, A. Luican-Mayer, R. Divan, GW Crabtree, WK Kwok
Extremely large magnetoresistance (XMR) was recently discovered in WTe2, triggering extensive research on this material regarding the XMR origin. Since WTe2 is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe2: (1) WTe2 is electronically 3D with a mass anisotropy as low as 2, as revealed by the 3D scaling behavior of the resistance RðH; θÞ ¼ RðεθHÞ with εθ ¼ ðcos2θ þ γ−2sin2θÞ1=2, θ being the magnetic field angle with respect to the c axis of the crystal and γ being the mass anisotropy and (2) the mass anisotropy γ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe2, including the origin of the remarkable “turn-on” behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metalinsulator transition.