The goal of this thesis is to growth a high-quality molybdenum disulfide (MoS2) nanosheets composed of a couple of monolayers. These materials are promising for nanoelectronic, optoelectronic, valleytronic, and energy harvesting devices. Its sizable bandgap (in visible region) and many other extraordinary electronic and optoelectronic properties make it a promising potential substitute of Si in conventional electronic application. An important next step is the fabrication of monolayer or bilayer MoS2 nanosheets. Various methods have been reported in recent years to prepare high-quality material. Among them, chemical vapor deposition has been considered the most frequently-used method which was previously widely used for the growth of thin films and nanomaterials such as nanowires, nanotubes, and graphene.
The first part of this thesis gives a background introduction to MoS2 materials especially the growth of MoS2 nanosheet. In the second part of the thesis the CVD growth of MoS2 growth is presented and the characterization of as-grown MoS2 nanosheets is discussed. Finally a summary chapter is presented