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Investigating Compositional Effects of ALD Ternary Dielectric Ti-Al-O on MISH capacitor structure for Gate Insulation of InAlN/GaN and AlGaN/GaN
(American Institute of Physics Inc., 2016-11-01)
Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction fieldeffect transistors (HFETs) is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding ...