Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
PublisherAmerican Institute of Physics
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The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb typeII superlattice. Auger coefficients as small as 7:1 1026 cm6 /s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K–80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. The experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe.