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dc.contributor.advisorStroscio, Michael A.en_US
dc.contributor.authorLan, Yien_US
dc.date.accessioned2016-07-01T22:32:43Z
dc.date.available2016-07-01T22:32:43Z
dc.date.created2016-05en_US
dc.date.issued2016-07-01
dc.date.submitted2016-05en_US
dc.identifier.urihttp://hdl.handle.net/10027/20914
dc.description.abstractEnhanced Signal-to-Noise in Photodetectors 1. Idea of this single-double well photodetector 2. Designs in different materials 3. Phonon modes, dispersion curves, and interface phonon potential curves 4. Transfer efficiency 5. Design with delta doping DNA-aptamer-based Sensors with Graphene FET-like Structure 1. IgE and IgE aptamer 2. Mono-layer graphene FET-like device 3. Testing and resultsen_US
dc.language.isoenen_US
dc.rightsen_US
dc.rightsCopyright 2016 Yi Lanen_US
dc.subjectPhotodetectoren_US
dc.subjectQuantum wellsen_US
dc.subjectPhonon modesen_US
dc.subjectDispersion curvesen_US
dc.subjectInterface phonon potentialen_US
dc.subjectGraphene FET-like sensoren_US
dc.subjectIgEen_US
dc.subjectAptameren_US
dc.titleEnhanced Signal-to-Noise in Photodetector and DNA-aptamer-based Sensor with a Graphene FET-like Structureen_US
thesis.degree.departmentElectrical and Computer Engineeringen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
thesis.degree.grantorUniversity of Illinois at Chicagoen_US
thesis.degree.levelDoctoralen_US
thesis.degree.namePhD, Doctor of Philosophyen_US
dc.type.genrethesisen_US
dc.contributor.committeeMemberDutta, Mitraen_US
dc.contributor.committeeMemberShi, Junxiaen_US
dc.contributor.committeeMemberJin, Ningen_US
dc.contributor.committeeMemberAn, Seyoungen_US
dc.type.materialtexten_US


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