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dc.contributor.advisorStroscio, Michael Aen_US
dc.contributor.authorKrishnababu, Kirupavathien_US
dc.date.accessioned2017-11-01T14:53:27Z
dc.date.available2017-11-01T14:53:27Z
dc.date.created2017-08en_US
dc.date.issued2017-07-28en_US
dc.date.submittedAugust 2017en_US
dc.identifier.urihttp://hdl.handle.net/10027/22042
dc.description.abstractThe expression for the lifetime of optical phonons in bulk material has been well researched; however, there aren’t enough estimations for the theoretical lifetime of optical phonons in confined structures. In this paper, the expression for lifetime of a confined optical phonon decaying in to two acoustical phonons in GaAs double heterointerface structures was derived. Using the expression for the displacement of the optical and acoustic phonons in three phonon decay process, the Hamiltonian of the anharmonic decay is calculated. From the Fermi golden rule, the rate of transition and theoretical lifetime of phonon was calculated.en_US
dc.format.mimetypeapplication/pdfen_US
dc.subjectPhonons, Confined phononsen_US
dc.titleLifetime Of Anharmonic Decay Of Optical Phonons In Confined GaAs Structureen_US
dc.typeThesisen_US
thesis.degree.departmentElectrical and computer Engineeringen_US
thesis.degree.grantorUniversity of Illinois at Chicagoen_US
thesis.degree.levelMastersen_US
thesis.degree.nameMS, Master of Scienceen_US
dc.contributor.committeeMemberShi, Junxiaen_US
dc.contributor.committeeMemberVaisband, Inna Partinen_US
dc.type.materialtexten_US
dc.contributor.chairStroscio, Michael Aen_US


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