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dc.contributor.authorRasul, Amjad
dc.contributor.authorZhang, Jie
dc.contributor.authorGamota, Dan
dc.contributor.authorSingh, Manish
dc.contributor.authorTakoudis, Christos
dc.date.accessioned2011-03-01T03:45:06Z
dc.date.available2011-03-01T03:45:06Z
dc.date.issued2010-09-30
dc.identifier.bibliographicCitationRasul, A., Zhang, J., Gamota, D., Singh, M., & Takoudis, C. 2010. Flexible high capacitance nanocomposite gate insulator for printed organic field-effect transistors. Thin Solid Films, 518(23): 7024-7028. DOI: 10.1016/j.tsf.2010.06.058en
dc.identifier.issn0040-6090
dc.identifier.otherDOI: 10.1016/j.tsf.2010.06.058
dc.identifier.urihttp://hdl.handle.net/10027/7369
dc.descriptionPost print version of article may differ from published version. The definitive version is available through Elsevier at DOI: 10.1016/j.tsf.2010.06.058en
dc.description.abstractCeramic-polymer nanocomposite dielectric consisting of an epoxy solution with Propylene Glycol Methyl Ether Acetate as the solvent and Barium Titanate nanoparticles with capacitance in excess of 60 pF/mm2 was developed and utilized as the gate insulator for organic field effect transistors (OFETs). The high relative permittivity (κ= 35), bimodal nanocomposite utilized had two different filler particle sizes 200 nm and 1000 nm diameter particles. Bottom gate organic filed effect transistors were demonstrated using a commercially available printing technology for material deposition. A metal coated plastic film was used as the flexible gate substrate. Solution processable, p-type arylamine based amorphous organic semiconductor was utilized as the active layer. Fabricated OFETs with the solution processed nanocomposite dielectric had a high field-induced current and a low threshold voltage; these results suggest that the low operating voltage was due to the high capacitance gate insulator. In this paper, we review the characteristics of the nanocomposite dielectric material and discuss the processing and performance of the printed organic devices.en
dc.description.sponsorshipMotorola Physical Realization Research CoE (PRRC) and Huntsman Advanced Materialsen
dc.language.isoen_USen
dc.publisherElsevieren
dc.subjectthin-film transistorsen
dc.subjectlow-voltageen
dc.titleFlexible high capacitance nanocomposite gate insulator for printed organic field-effect transistorsen
dc.typeArticleen


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